Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference17 articles.
1. Titanium dioxide (TiO2)-based gate insulators
2. On the Electrical Characterization of High-ĸ Dielectrics
3. Carrier mobility in advanced CMOS devices with metal gate and HfO2 gate dielectric
4. Dielectric property and thermal stability of HfO2 on silicon
5. Band offsets of high dielectric constant gate oxides on silicon
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3. Resistive switching characteristics of HfO<sub><i>x</i></sub>-based resistance random access memory under photoelectric synergistic regulation;Acta Physica Sinica;2023
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