Characterization of Thick GaN Films Directly Grown on Wet-Etching Patterned Sapphire by HVPE
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/26/9/096801/pdf
Reference13 articles.
1. High‐power InGaN single‐quantum‐well‐structure blue and violet light‐emitting diodes
2. A new method of reducing dislocation density in GaN layer grown on sapphire substrate by MOVPE
3. Ultraviolet Phototransistors on AlGaN/GaN Heterostructures
4. Optical properties of GaN grown by hydride vapor-phase epitaxy
5. Investigation of characteristics of laterally overgrown GaN on striped sapphire substrates patterned by wet chemical etching
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates;Chinese Physics B;2015-11
2. Formation mechanism of subtrenches on cone-shaped patterned sapphire substrate;Science China Technological Sciences;2011-06-06
3. Deflection Reduction of GaN Wafer Bowing by Coating or Cutting Grooves in the Substrates;Chinese Physics Letters;2011-04
4. Response time improvement of AlGaN photoconductive detectors by adjusting crystal-nuclei coalescence process in metal organic vapor phase epitaxy;Journal of Semiconductors;2011-01
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