Growth and fabrication of semi-polar InGaN/GaN multi-quantum well light-emitting diodes on microstructured Si (001) substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/24/11/118102/pdf
Reference17 articles.
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1. A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations;Optics and Spectroscopy;2022-03
2. Formation of Semipolar Group-III-Nitride Layers on Textured Si(100) Substrates with Self-Forming Nanomask;Semiconductors;2021-04
3. Monolithic semi-polar ( 1 1 ¯ 01 ) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*;Chinese Physics B;2019-08-01
4. Semipolar ( $$ 1\bar{1}01 $$ 1 1 ¯ 01 ) InGaN/GaN red–amber–yellow light-emitting diodes on triangular-striped Si (100) substrate;Journal of Materials Science;2019-02-25
5. Multicolored-light emission from InGaN/GaN multiple quantum wells grown by selective-area epitaxy on patterned Si(100) substrates;Journal of Materials Science;2018-08-16
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