Formation mechanism of subtrenches on cone-shaped patterned sapphire substrate
Author:
Publisher
Springer Science and Business Media LLC
Subject
General Engineering,General Materials Science
Link
http://link.springer.com/content/pdf/10.1007/s11431-011-4396-y.pdf
Reference16 articles.
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3. Bell A, Liu R, Ponce F A, et al. Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire. Appl Phys Lett, 2003, 82: 349–351
4. Hiramatsu K. Epitaxial lateral overgrowth techniques used in group III nitride epitaxy. J Phys: Condens Matter, 2001, 13: 6961–6975
5. Lee Y J, Hwang J M, Hsu T C, et al. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates. IEEE Photon Technol Lett, 2006, 18: 1152–1154
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