AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template-Reference-Cited by-同舟云学术

AlGaN-Based Deep-Ultraviolet Light Emitting Diodes Fabricated on AlN/sapphire Template

Published:2009-10-29 Issue:11 Volume:26 Page:117801
ISSN:0256-307X
Container-title:Chinese Physics Letters
language:
Short-container-title:Chinese Phys. Lett.

Author:

Li-Wen Sang,Zhi-Xin Qin,Hao Fang,Yan-Zhao Zhang,Tao Li,Zheng-Yu Xu,Zhi-Jian Yang,Bo Shen,Guo-Yi Zhang,Shu-Ping Li,Wei-Huang Yang,Hang-Yang Chen,Da-Yi Liu,Jun-Yong Kang

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/0256-307X/26/11/117801/pdf

Reference15 articles.

1. Robust 285 nm Deep UV Light Emitting Diodes over Metal Organic Hydride Vapor Phase Epitaxially Grown AlN/Sapphire Templates

2. Growth and photoluminescence studies of Al-rich AlN∕AlxGa1−xN quantum wells

3. AlGaN single-quantum-well light-emitting diodes with emission at 285 nm

4. 250nmAlGaN light-emitting diodes

5. AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes;Fundamental Research;2021-11

2. Anderson Localization Enabled Spectrally Stable Deep-Ultraviolet Laser Based on Metallic Nanoparticle Decorated AlGaN Multiple Quantum Wells;ACS Nano;2020-12-07

3. Aluminum incorporation efficiencies in A - and C -plane AlGaN grown by MOVPE;Chinese Physics B;2016-04

4. High density GaN/AlN quantum dots for deep UV LED with high quantum efficiency and temperature stability;Scientific Reports;2014-06-05

5. GaN-based substrates and optoelectronic materials and devices;Chinese Science Bulletin;2014-03-01