Author:
Lin Qian,Wu Haifeng,Li Xi
Abstract
Purpose
The purpose of this paper is to investigate the temperature reliability for a parallel high-efficiency class-E power amplifier (PA).
Design/methodology/approach
To explore the relationship between temperature and direct current (DC) characteristics, output power, S parameters and efficiency of the PA quantitatively, a series of reliability experiments have been designed and conducted to study the temperature reliability for this PA.
Findings
From the results, the prominent performance degradation even failure is found during the testing. Furthermore, the thermal shock test can cause permanent failure, which is a great threat for PA.
Research limitations/implications
Therefore, to ensure the good performance, the influence of temperature on PA reliability should be carefully considered during the stage of PA design.
Practical implications
All these can provide important guidance for the reliability design of PA.
Social implications
All these can give some important guidance for PA application.
Originality/value
In addition, PA is usually designed according to the electrical properties at the room temperature. From the results above, it can be concluded that it may be unable to satisfy the performance requirement at high temperature. In turn, if it is designed according to the electrical properties at low temperature, the transistor often works in the super-saturated state, the reliability of PA will become the new problem. Therefore, to ensure the good performance, the influence of temperature on PA reliability should be carefully considered during the design.
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering
Reference22 articles.
1. High-frequency measurements of AlGaN/GaN HEMTs at high temperatures;IEEE Electron Device Letters,2001
2. Semiconductor device reliability in extreme high temperature space environments,2001
3. A 65 nm CMOS 30dBm class-E RF power amplifier with 60% PAE and 40% PAE at 17dB back-off;IEEE Journal of Solid-State Circuits,2009
4. A low-power CMOS class-E power amplifier for biotelemetry applications,2005
5. A review of failure modes and mechanisms of GaN-based HEMT,2007
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-08-29
2. A lost cost broadband GaAs pHEMT low noise amplifier;2023 International Conference on Microwave and Millimeter Wave Technology (ICMMT);2023-05-14
3. Power Amplifier Chipset for Low-Orbit Satellite Communication Ground Station;2022 IEEE 9th International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications (MAPE);2022-08-26
4. Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA;Micromachines;2022-07-15
5. Investigation of the Specification Degradation Mechanism of CMOS Power Amplifier under Thermal Shock Test;Micromachines;2022-05-24