TEMPERATURE DEPENDENT NOISY MODELS OF PSEUDOMORPHIC HEMTs

Abstract

From a complete characterization in terms of noise and scattering parameters carried out at room temperature in the 8–16 GHz frequency range, the noisy small‐signal model of a pseudomotphic HEMT series has been extracted. The transistor scattering parameters have been subsequently measured at lower temperatures (down to −50 °C) by placing the device text fixture in a thermo‐controlled chamber. The model effectiveness has then been tested by determining the circuit element values at the different temperatures and by observing the model noise performance.