Silicon MOSFET devices electrical parameters evolution at high temperatures-Reference-Cited by-同舟云学术

Silicon MOSFET devices electrical parameters evolution at high temperatures

Published:2007-12-28 Issue:1 Volume:25 Page:21-24
ISSN:1356-5362
Container-title:Microelectronics International
language:en
Short-container-title:Microelectronics International

Author:

Salame C.¹,Habchi R.²

Affiliation:

1. CEA‐LPSE, Faculty of Sciences II, Lebanese University, Jdeidet El Mten, Lebanon CNRSL, National Council for Scientific Research, Beirut, Lebanon

2. CEA‐LPSE, Faculty of Sciences II, Lebanese University, Jdeidet El Mten, Lebanon LP2A, Université de Perpignan, Perpignan, France

Publisher

Emerald

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Junction parameters for silicon devices characterization

2. A New Junction Parameters Determination Using the Double Exponential Model

3. Generation of minority charge carriers at the semiconductor surface during thermally activated ionic depolarization of metal-insulator-semiconductor structures

4. Observation of intrinsic bistability in resonant tunneling diode modeling

5. Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction

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