Modeling real junctions by a series combination of two ideal diodes with parallel resistance and its parameter extraction

Author:

Ortiz-Conde A.,Estrada M.,Cerdeira A.,Garcı́a Sánchez F.J.,De Mercato G.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Semiconductor material and device characterization;Schroeder,1990

2. Procedure for determining diode parameters at very low forward voltage;Ranuárez;Solid-State Electron,1999

3. An approximate analytical expression for the equation of the ideal diode with series and shunt resistance;Ortiz-Conde;Electron Lett,1992

4. New method of parameter extraction from dark I–V curve;Kaminski;Photovoltaic Specialist Conf,1997

5. Exact analytical solution for the current flow through diode with series resistance;Banwell;Electron Lett,2000

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