Author:
Twitchett Alison C.,Dunin-Borkowski Rafal E.,Hallifax Robert J.,Broom Ronald F.,Midgley Paul A.
Abstract
Off-axis electron holography is used to measure electrostatic potential profiles across a siliconp-njunction, which has been prepared for examination in the transmission electron microscope (TEM) in two different specimen geometries using focused ion beam (FIB) milling. Results are obtained both from a conventional unbiased FIB-milled sample and using a novel sample geometry that allows a reverse bias to be applied to an FIB-milled samplein situin the TEM. Computer simulations are fitted to the results to assess the effect of TEM specimen preparation on the charge density and the electrostatic potential in the thin sample.
Publisher
Cambridge University Press (CUP)
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