Author:
Root David,Horn Jason,Verspecht Jan,Marcu Mihai
Publisher
Cambridge University Press
Cited by
27 articles.
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1. Transistor modeling based on LM‐BPNN and CG‐BPNN for the GaAs pHEMT;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-07
2. DC‐bias and temperature included CSWPL model for RF power transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-03
3. Incorporating DC bias voltage in poly‐harmonic distortion modeling for RF power GaN transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-01-11
4. A Novel Tempreature-Included CSWPL Model for GaN HEMTs;2023 5th International Conference on Circuits and Systems (ICCS);2023-10-27
5. An Overview of Nonlinear Behavioral Modeling Approaches for Microwave GaN Power Transistors;2023 16th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS);2023-10-25