An Overview of Nonlinear Behavioral Modeling Approaches for Microwave GaN Power Transistors
Author:
Affiliation:
1. Hangzhou Dianzi University,Key Laboratory of RF Circuit and System, Ministry of Education,Hangzhou,China,310018
2. University of Messina,BIOMORF Department,Messina,Italy,98125
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10315951/10315716/10316040.pdf?arnumber=10316040
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