Author:
Simpson Gary,Horn Jason,Gunyan Daniel,Root David E.
Cited by
22 articles.
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1. DC‐bias and temperature included CSWPL model for RF power transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2024-03
2. Review of RF Device Behavior Model: Measurement Techniques, Applications, and Challenges;Micromachines;2023-12-25
3. Cardiff Behavioral Model from Passive Load-Pull while Enforcing S-Parameters;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08
4. A Novel Tempreature-Included CSWPL Model for GaN HEMTs;2023 5th International Conference on Circuits and Systems (ICCS);2023-10-27
5. An Overview of Nonlinear Behavioral Modeling Approaches for Microwave GaN Power Transistors;2023 16th International Conference on Advanced Technologies, Systems and Services in Telecommunications (TELSIKS);2023-10-25