Raman Spectroscopy and Electron Microscopy Studies of Ga FIB and Post-FIB Ar Ion Milling's Impact on Si TEM Specimens-Reference-Cited by-同舟云学术

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Raman Spectroscopy and Electron Microscopy Studies of Ga FIB and Post-FIB Ar Ion Milling's Impact on Si TEM Specimens

Published:2022-08-01 Issue:S1 Volume:28 Page:52-53
ISSN:1435-8115
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:

Author:

Bonifacio CS¹,Tan S²,Nowakowski P¹,Ray ML¹,Fischione PE¹

Affiliation:

1. E.A. Fischione Instruments, Inc. , Export, PA, USA

2. University of Pittsburgh Department of Electrical and Computer Engineering & Nanoscale Fabrication and Characterization Facility, , Pittsburgh, PA USA

Publisher

Oxford University Press (OUP)

Subject

Instrumentation

Link

https://academic.oup.com/mam/article-pdf/28/S1/52/48822544/mam0052.pdf

Reference7 articles.

1. O+ PFIB Milling and Measurement of FIB Damage in Silicon

2. Accurate Removal of Implanted Gallium and Amorphous Damage from TEM Specimens after Focused Ion Beam (FIB) Preparation

3. Removal of Ga Implantation on FIB-prepared Atom Probe Specimens Using Small Beam and Low Energy Ar+ Milling

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Latest Developments in Post-FIB Concentrated Ar Ion Beam Milling of TEM Specimens with Large Electron-transparent Areas;Microscopy and Microanalysis;2024-07

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