Controlling the self-organization of InAs quantum dots upon growth by means of vapor-phase epitaxy on an antimony δ-doped GaAs buffer layer-Reference-Cited by-同舟云学术

Controlling the self-organization of InAs quantum dots upon growth by means of vapor-phase epitaxy on an antimony δ-doped GaAs buffer layer

Published:2011-01 Issue:1 Volume:75 Page:25-27
ISSN:1062-8738
Container-title:Bulletin of the Russian Academy of Sciences: Physics
language:en
Short-container-title:Bull. Russ. Acad. Sci. Phys.

Author:

Zdoroveishchev A. V.,Baidus’ N. V.,Zvonkov B. N.,Demina P. B.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.3103/S106287381101028X.pdf

Reference7 articles.

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2. Cherkashin, N.A., Maksimov, M.V., Makarov, A.G., et al., Fiz. Tekhn. Poluprovodn., 2003, vol. 37,issue 7, p. 89 [Semicond. (Engl. Transl.), 2003, vol. 37, issue 7, p. 861].

3. Lee, Y., Ahn, E., Kim, J., et al., Appl. Phys. Lett., 2007, vol. 90, p. 033105.

4. Zdoroveishchev, A.V., Demina, P.B., and Karpovich, I.A., Poverkhn., 2011, no. 1, p. 1.

5. Guimard, D., Nishioka, M., Tsukamoto, S., and Arakawa, Y., Appl. Phys. Lett., 2006, vol. 89, p. 183124.

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