Author:
Goldstein R. V.,Gorodtsov V. A.,Shushpannikov P. S.
Subject
General Physics and Astronomy,Mechanics of Materials
Reference52 articles.
1. K.A. Valiev, R. V. Goldstein, and T.M. Makhviladze, “Certain Problems of Strength and Fracture of Microand Submicroelectronics Components,” Tr. FTIAN 18, 379–397 (2005).
2. G. Abstreiter, H. Brugger, T. Wolf, et al., “Strain-Induced Two-Dimensional Electron Gas in Selectively Doped Si/SixSi1−x Superlattices,” Phys. Rev. Lett. 54(22), 2441–2444 (1985).
3. F. Schaffler, “High-Mobility Si and Ge Structures,” Semicond. Sci. Technol. 12(12), 1515–1549 (1997).
4. Y.-J. Yang, W. S. Ho, C.-F. Huang, et al., “Electron Mobility Enhancement in Strained-Germanium n-ChannelMetal-Oxide Semiconductor Field-Effect Transistors,” Appl. Phys. Lett. 91(10), 102103 (2007).
5. S. Orein, V. Fiori, D. Villanueva, et al., “Method for Managing the Stress due to the Strained Nitride Capping Layer in MOS Transistors,” IEEE Trans. Elect. Devices 54(4), 814–821 (2007).
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献