Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling
-
Published:2010-02
Issue:2
Volume:74
Page:241-244
-
ISSN:1062-8738
-
Container-title:Bulletin of the Russian Academy of Sciences: Physics
-
language:en
-
Short-container-title:Bull. Russ. Acad. Sci. Phys.
Author:
Kharlamov V. S.,Kulikov D. V.,Trushin Yu. V.,Nader P.,Mazri P.,Stauden Th.,Pezoldt J.
Subject
General Physics and Astronomy
Reference12 articles.
1. Pezoldt, J., Förster, Ch., Weih. P., and Masri, P., Appl. Surf. Sci., 2001, vol. 184, p. 79. 2. Zgheib, Ch., McNeil, L.E., Kazan, M., Masri, P., Morales, F.M., Ambacher, O., and Pezoldt, J., Appl. Phys. Lett., 2005, vol. 87, 041905. 3. Zgheib, Ch., McNeil, L.E., Masri, P., Förster, Ch., Morales, F.M., Stauden, Th., Ambacher, O., and Pezoldt, J., Appl. Phys. Lett., 2006, vol. 88, 211909. 4. Ber, B.Ya., Zhurkin, E.E., Ivanov, D.P., Merkulov, A.V., Smirnov, A.B., Trushin, Yu.V., and Kharlamov, V.S., Poverkhnost’, 1995, vol. 5, p. 74. 5. Ber, B.J., Kharlamov, V.S., Kudrjavtsev, Yu.A., Merkulov, A.V., Trushin, Yu.V., and Zhurkin, E.E., Nucl. Instr. and Meth. B, 1997, vol. 127/128, p. 286.
|
|