Author:
Hovsepyan R. B.,Aghamalyan N. R.,Petrosyan S. I.
Subject
General Physics and Astronomy
Reference17 articles.
1. Aghamalyan, N.R., Kafadaryan, E.A., Hovsepyan, R.K., and Petrosyan, S.I., Semicond. Sci. Technol., 2005, vol. 20, p. 80.
2. Yamamoto, T. and Katayama-Yoshida, H., J. Cryst. Growth, 2000, vol. 214/215, p. 552.
3. Yamamoto, T. and Katayama-Yoshida, H., Mater. Res. Soc. Proc., 2000, vol. 623, p. 223.
4. Aghamalyan, N.R., Hovsepyan, R.K., and Petrosyan, S.I., J. Contemp. Phys. (Armenian Ac. Sci.), 2008, vol. 43, p. 177.
5. Carcia, P.F., McLean, R.S., et al., Mater. Res. Soc. Symp. Proc., 2003, vol. H7.2.1, p. 769.
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