p-type ZnO films for preparation of p-n-junctions

Author:

Aghamalyan N. R.,Hovsepyan R. K.,Petrosyan S. I.

Publisher

Allerton Press

Subject

General Physics and Astronomy

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Field-Effect Transistor Based on Zinc Oxide Using Diffusion Technology;Journal of Contemporary Physics (Armenian Academy of Sciences);2019-07

2. Properties of the ZnO Films Obtained on Mesoporous Si Substrates by means of a Magnetron Sputtering;Nanosistemi, Nanomateriali, Nanotehnologii;2019-03-30

3. Study on preparation and sensitive properties of Ag-doped ZnO thin films;Optical Sensing and Imaging Technologies and Applications;2018-12-12

4. Memory element based on ferroelectric field-effect transistor with use of ZnO:Li/LaB6 heterostructures;Journal of Contemporary Physics (Armenian Academy of Sciences);2013-04-28

5. P-Doped p-Type ZnΟ Films Deposited by Sputtering and Diffusing;Advanced Materials Research;2012-07

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