Affiliation:
1. IBM Laboratories, Hopewell Junction, New York
Abstract
High energy C+ implantation is used to construct a two crystal monolithic X-ray interferometer. The X-ray interferometer technique is applied to in-situ studies of radiation damage annealing in the interferometer. Volume changes in the crystal due to the transformation of single crystal silicon to amorphous silicon and due to the formation of silicon carbide are measured.
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy,Mathematical Physics
Cited by
12 articles.
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