Asymmetric Ge/SiGe coupled quantum well modulators
Author:
Zhang Yi1, Gao Jianfeng1, Qin Senbiao1, Cheng Ming1, Wang Kang1, Kai Li1, Sun Junqiang1ORCID
Affiliation:
1. Wuhan National Laboratory for Optoelectronics , School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan , 430074 , Hubei , China
Abstract
Abstract
We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V
π
L
π
of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.
Publisher
Walter de Gruyter GmbH
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials,Biotechnology
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