Author:
Kavitha M.,Naifar A.,Peter A. John,Raja V.
Publisher
Springer Science and Business Media LLC
Reference53 articles.
1. Aciksoz, E., Bayrak, O., Soylu, A.: Binding energy of the donor impurities in GaAs–Ga1−xAlxAs quantum well wires with Morse potential in the presence of electric and magnetic fields. Chin. Phys. B 25(10), 100302 (2016)
2. Adachi, S.: Properties of Group-IV. Wiley, III-V and II-VI Semiconductors (2005)
3. Ahn, D., Chuang, S.L.: Calculation of linear and nonlinear intersubband optical absorptions in a quantum well model with an applied electric field. IEEE J. Quantum Electron. QE-23, 2196–2204 (1987)
4. Al, E.B., Kasapoglu, E., Sakiroglu, S., Sari, H., Sökmen, I.: Influence of position dependent effective mass on impurity binding energy and absorption in quantum wells with the Konwent potential. Mater. Sci. Semicond. Proc. 135, 106076–106086 (2021)
5. Althib, H.: Effect of quantum barrier width and quantum resonant tunneling through InGaN/GaN parabolic quantum well-LED structure on LED efficiency. Res. Phys. 22, 103943–103952 (2021)