Binding energy of the donor impurities in GaAs–Ga 1 − x Al x As quantum well wires with Morse potential in the presence of electric and magnetic fields-Reference-Cited by-同舟云学术

Binding energy of the donor impurities in GaAs–Ga 1 − x Al x As quantum well wires with Morse potential in the presence of electric and magnetic fields

Published:2016-09-23 Issue:10 Volume:25 Page:100302
ISSN:1674-1056
Container-title:Chinese Physics B
language:
Short-container-title:Chinese Phys. B

Author:

Aciksoz Esra,Bayrak Orhan,Soylu Asim

Publisher

IOP Publishing

Subject

General Physics and Astronomy

Link

https://iopscience.iop.org/article/10.1088/1674-1056/25/10/100302/pdf

Reference52 articles.

1. Effect of the hydrostatic pressure on two-dimensional transport in delta-doped systems

2. The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/AlxGa1−xN spherical quantum dot

3. Combined effects of intense laser field and applied electric field on exciton states in GaAs quantum wells: Transition from the single to double quantum well

4. Lateral electric field effects on quantum size confinement in cylindrical quantum dot under parabolic potential

5. External electric field effect on the hydrogenic donor impurity in zinc-blende GaN/AlGaN cylindrical quantum dot

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