Improved T-Shaped Gate Double Heterojunction AlGaN/GaN/InGaN/GaN HEMT-Based Wideband Flat LNA
Author:
Affiliation:
1. Department of Electrical Engineering, Science and Research branch, Islamic Azad University, Tehran, Iran
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,Computer Science Applications,Theoretical Computer Science
Link
https://www.tandfonline.com/doi/pdf/10.1080/03772063.2015.1085336
Reference21 articles.
1. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
2. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
3. Ultra-high speed modulation-doped field-effect transistors: a tutorial review
4. A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
5. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
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