Fabrication and optimization of T -gate for high performance HEMT and MMIC devices
Author:
Affiliation:
1. Indian Institute of Technology,Department of Electrical Engineering,Bombay Mumbai,India
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117590/10117577/10117759.pdf?arnumber=10117759
Reference22 articles.
1. Improvement of Power Performance of GaN HEMT by Using Quaternary InAIGaN Barrier;wang;IEEE Journal of the Electron Devices Society,0
2. InAIN/GaN HEMTs on Si With High fT of 250 GHz;xing;IEEE Electron Device Letters,0
3. The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length
4. A Millimeter-Wave AlGaN/GaN HEMT Fabricated With Transitional-Recessed-Gate Technology for High-Gain and High- Linearity Applications
5. Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices
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