Abstract
Abstract
This study proposes a 30 nm gate length double-gate InAlN/GaN on a 4H-SiC substrate high-electron-mobility transistor. Different electrical characteristics such as DC, AC, capacity and noise analysis were performed through TCAD device simulations. The proposed device exhibited a maximum drain current of 2.15 A mm−1, a transconductance of 1308 mS/mm, (350/610) GHz of FT/FMAX and a maximum noise figure of NFMax = 9.5 dB at 1 THz. Thus, LNA-HEMT has been designed considering the main characteristics of power with a new structure, in terms of temperature and low noise figure effect. Adopting the backup bulk in the optimization procedure, the proposed device obtained an outstanding performance with appropriate low power consumption for the GEO satellite application.
Reference38 articles.
1. Design of a low noise amplifier with GaAs MESFET at ku_Ba$nd;Islam,2010
2. Ultra low noise figure, low power consumption Ku- Band LNA with high gain for space application;Murthy,2020
3. AlGaN/GaN low noise amplifier MMICs for C-, Ku- and Ka-band space applications;Suijker;(IEEE Compound Semiconductor Integrated Circuit Symposium),2009
4. Radiation hardness of gallium nitride;Carlone;IEEE Trans. Nucl. Sci.,2003
5. Analysis of AlGaN/GaN HEMT with Lg=70 nm for satellite application;Imane,2022