FERROELECTRIC SWITCHING DYNAMICS AND PULSE-SWITCHING POLARIZATION MEASUREMENTS
Author:
Affiliation:
1. a Department of Ceramic Science and Engineering , Changwon National University , Changwon, 641-773, Kyungnam, Korea
2. b ReCOE and School of Physics, Seoul National University , Seoul, 151-747, Korea
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584580600660306
Reference8 articles.
1. Note on Ferroelectric Domain Switching
2. Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films
3. Crossover between nucleation-controlled kinetics and domain wall motion kinetics of polarization reversal in ferroelectric films
4. Liquid Delivery Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3Thin Films for High-Density Ferroelectric Random Access Memory Application
5. Integration of Ferroelectric Random Access Memory Devices with Ir/IrO2/Pb(ZrxTi1-x)\barO3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(ZrxTi1-x)O3
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