Integration of Ferroelectric Random Access Memory Devices with Ir/IrO2/Pb(ZrxTi1-x)\barO3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(ZrxTi1-x)O3-Reference-Cited by-同舟云学术

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Integration of Ferroelectric Random Access Memory Devices with Ir/IrO2/Pb(ZrxTi1-x)\barO3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(ZrxTi1-x)O3

Published:2002-11-30 Issue:Part 1, No. 11B Volume:41 Page:6709-6713
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Moon-Sook,Park Kun-Sang,Nam Sang-Don,Lee Kyu-Mann,Seo Jung-Suk,Joo Suk-Ho,Lee Sang-Woo,Lee Yong-Tak,An Hyeong-Geun,Kim Hyoung-Joon,Cho Sung-Lae,Son Yoon-Ho,Kim Young-Dae,Jung Yong-Joo,Heo Jang-Eun,Park Soon-Oh,Chung U-In,Moon Joo-Tae

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=11S/a=6709/pdf

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fluorescent Colloidal Ferroelectric Nanocrystals;Journal of the American Chemical Society;2022-01-24

2. Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions;Journal of Applied Physics;2019-08-21

3. Modulating Ferroelectric Response in Colloidal Semiconductor Nanocrystals through Cation Exchange;Chemistry of Materials;2019-05-31

4. Atomic Layer Deposition for Microelectronic Applications;Atomic Layer Deposition of Nanostructured Materials;2012-01-02

5. Growth of highly oriented iridium oxide bottom electrode for Pb(Zr,Ti)O3 thin films using titanium oxide seed layer;Journal of Materials Science;2011-11

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