GROWTH TEMPERATURE DEPENDENCE OF Ga2O3 THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION-Reference-Cited by-同舟云学术

GROWTH TEMPERATURE DEPENDENCE OF Ga2O3 THIN FILMS DEPOSITED BY PLASMA ENHANCED ATOMIC LAYER DEPOSITION

Published:2007-12-11 Issue:1 Volume:94 Page:11-20
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

LIU G. X.¹²,SHAN F. K.¹²,LEE W. J.²,SHIN B. C.²,KIM S. C.³,KIM H. S.⁴,CHO C. R.⁵

Affiliation:

1. a Laboratory of New Fiber Materials and Modern Textile, Growing Base for State Key Laboratory, Qingdao University , Qingdao , 266071 , China

2. b Electronic Ceramics Center, DongEui University , Busan , 614-714 , Korea

3. c Physics Department , DongEui University , Busan , 614-714 , Korea

4. d Department of Semiconductor Physics , Korea Maritime University , Busan , 600-545 , Korea

5. e Department of Nano-medical Engineering , Pusan National University , Busan , 609-735 , Korea

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580701755716

Reference14 articles.

1. Stability of semiconducting gallium oxide thin films

2. Evaporated Sn‐doped In2O3films: Basic optical properties and applications to energy‐efficient windows

3. Optical properties of gallium oxide thin films

4. Optical properties of β‐Ga2O3and α‐Ga2O3:Co thin films grown by spray pyrolysis

5. Structural and Optical Characteristics of Gallium Oxide Thin Films Deposited by Ultrasonic Spray Pyrolysis

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