EFFECTS OF NITROGEN INCORPORATION IN LANTHANUM-BASED DIELECTRIC FILMS-Reference-Cited by-同舟云学术

EFFECTS OF NITROGEN INCORPORATION IN LANTHANUM-BASED DIELECTRIC FILMS

Published:2008-06-10 Issue:1 Volume:97 Page:129-142
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

Edon V.¹²,Hugon M.-C.¹,Agius B.¹,Bastos K. P.³,Miotti L.³,Driemeier C.³,Salvador L.³,Krug C.³,Baumvol I. J. R.⁴,Eypert C.⁵,Durand O.⁶⁷

Affiliation:

1. a Laboratoire de Physique des Gaz et des Plasmas , Université Paris-Sud , UMR8578, 91405 , Orsay , France

2. f IEMN, Antenne USTL , 59655 Villeneuve d'Ascq, France

3. b Instituto de Física, Universidade Federal do Rio Grande do Sul , 91501-970 , Rio Grande do Sul , Brazil

4. c Universidade de Caxias do Sul, CCET , 95070-580 , Rio Grande do Sul , Brazil

5. d HORIBA Jobin Yvon S.A.S., Thin Film Division , 5 av. Arago, 91380 , Chilly-Mazarin , France

6. e Laboratoire d'Analyses Physiques Avancées , Thales Research & Technology , RD 128, 91767 , Palaiseau , France

7. g LENS/FOTON , INSA, 20 av. des Buttes de Coësmes, 35043 , Rennes , France

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580802088991

Reference19 articles.

1. High-? Gate Dielectrics

2. Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures

3. Formation of LaAlO3 films on Si(100) substrates using molecular beam deposition

4. Measurement of the band offsets between amorphous LaAlO3 and silicon

5. The role of nitrogen-related defects in high-k dielectric oxides: Density-functional studies

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