Growth of Pyrochlore Bi2Ti2O7 Epitaxial Films and Their Electrical Characterization
Author:
Affiliation:
1. a aDepartment of Innovative and Engineered Materials, Tokyo Institute of Technology, 4259-G1-32 Nagatsuta-cho, Midori-ku , Yokohama, Japan
2. b bFaculty of Science and Technology, Tokyo University of Science, 2641 Yamazaki , Noda-City, Japan
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584580490899082
Reference13 articles.
1. Preparation of Bi4Ti3O12films on a single‐crystal sapphire substrate with electron cyclotron resonance plasma sputtering
2. Some electrical and optical properties of ferroelectric lead‐zirconate–lead‐titanate thin films
3. Performance and Reliability of Low-Temperature Processed SrBi[sub 2]Ta[sub 2]O[sub 9] Capacitors for FeRAM Applications
4. PbTiO3 buffer layer effects on the structural and electrical properties of Pb(Zr, Ti)O3 thin films grown by sputtering on silicon substrates
5. Low Temperature Deposition of Pb(Zr,Ti)O3 Film by Source Gas Pulse-Introduced Metalorganic Chemical Vapor Deposition
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1. Effect of ZnO buffer layer on the structural and electrical properties of Bi1.5Zn1Nb1.5O7 thin films grown by pulsed laser ablation;Materials Today: Proceedings;2022
2. Effect of the Annealing Temperature on Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Films Prepared by MOCVD;Key Engineering Materials;2008-09
3. MOCVD growth of epitaxial pyrochlore Bi2Ti2O7 thin film;Journal of the European Ceramic Society;2006-01
4. Perovskite Single-Phase Growth of Epitaxial Pb(Zn1/3Nb2/3)O3Films by Alternative-Source-Gas-Introduced Metalorganic Chemical Vapor Deposition;Japanese Journal of Applied Physics;2005-11-18
5. MOCVD Growth of Bi1.5Zn1.0Nb1.5O7(BZN) Epitaxial Thin Films and Their Electrical Properties;Japanese Journal of Applied Physics;2005-09-22
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