Effect of the Annealing Temperature on Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Films Prepared by MOCVD
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Published:2008-09
Issue:
Volume:388
Page:175-178
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ISSN:1662-9795
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Container-title:Key Engineering Materials
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language:
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Short-container-title:KEM
Author:
Funakubo Hiroshi1,
Okaura Shingo1,
Suzuki Muneyasu1,
Uchida Hiroshi2,
Koda Seiichiro2
Affiliation:
1. Tokyo Institute of Technology
2. Sophia University
Abstract
Effect of annealing temperature on the dielectric properties of Bi1.5Zn1.0Nb1.5O7 films prepared on
(111)Pt//(001)Al2O3 and (111)Pt/fused silica substrates by MOCVD was investigated. The
tunability and the inverse of the dielectric loss [1/ (tan )] increased with increasing annealing
temperature. Relative dielectric constant and temperature coefficient of the capacitance (TCC)
increased with the crystallinity of the films. On the other hand, (1/tan ) was independent of the
crystallinity of the films, but was dramatically increased by the annealing.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science