Effect of ZnO buffer layer on the structural and electrical properties of Bi1.5Zn1Nb1.5O7 thin films grown by pulsed laser ablation-Reference-Cited by-同舟云学术

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Effect of ZnO buffer layer on the structural and electrical properties of Bi1.5Zn1Nb1.5O7 thin films grown by pulsed laser ablation

Published:2022 Issue: Volume:62 Page:595-598
ISSN:2214-7853
Container-title:Materials Today: Proceedings
language:en
Short-container-title:Materials Today: Proceedings

Author:

Krishnaprasad P.S.,Jayaraj M.K.

Publisher

Elsevier BV

Subject

General Medicine

Reference29 articles.

1. Permittivity;Tagantsev,2005

2. Progress in the developments of (Ba, Sr)TiO3 (BST) thin films for Gigabit era DRAMs;Ezhilvalavan;Mater. Chem. Phys.,2000

3. T. Tseng, Ferroelectrics (Ba , Sr) TiO 3 thin films : Preparation , properties and reliability, (n.d.) 37–41. 10.1080/00150199908015764.

4. Dielectric properties of pyrochlore (Bi1.5 Zn0.5) (Nb0.5 M1.5) O7 (M=Ti, Sn, Zr, and Ce) dielectrics;Du;Appl. Phys. Lett.,2006

5. Quantum paraelectric behavior of pyrochlore Pb1.83Mg0.29Nb1.71O6.39;Kamba;Phys. Rev. B.,2007

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