IMPROVEMENT OF MEMORY RETENTION IN METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURE BY SrBi2Ta2O9 SURFACE MODIFICATION INDUCED BY NITROGEN AND OXYGEN RADICAL IRRADIATION-Reference-Cited by-同舟云学术

IMPROVEMENT OF MEMORY RETENTION IN METAL-FERROELECTRIC-INSULATOR-SEMICONDUCTOR STRUCTURE BY SrBi2Ta2O9 SURFACE MODIFICATION INDUCED BY NITROGEN AND OXYGEN RADICAL IRRADIATION

Published:2006-11 Issue:1 Volume:84 Page:179-188
ISSN:1058-4587
Container-title:Integrated Ferroelectrics
language:en
Short-container-title:Integrated Ferroelectrics

Author:

VAN HAI LE¹,KANASHIMA TAKESHI¹,OKUYAMA MASANORI¹

Affiliation:

1. a Department of Systems Innovation, Graduate School of Engineering Science , Osaka University, Machikaneyamacho 1-3 , Toyonaka, 560-8531, Osaka, Japan

Publisher

Informa UK Limited

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.tandfonline.com/doi/pdf/10.1080/10584580601085784

Reference11 articles.

1. Ferroelectric memories

2. Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory

3. Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO 2 /Pb(Zr 0.52 Ti 0.48 )O 3 Heterostructures

4. Ferroelectric DRAM (FEDRAM) FET with metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si gate structure

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