Enhancement of Memory Retention Time of Metal/Ferroelectric/Insulator/Semiconductor Structure by Using Fast Annealing and Nitrogen Radical Irradiation
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Published:2009-08-14
Issue:2(1)
Volume:55
Page:884-887
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ISSN:0374-4884
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Container-title:Journal of the Korean Physical Society
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language:en
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Short-container-title:J. Korean Phy. Soc.
Author:
Hai Le Van,Takeshi Kanashima,Okuyama Masanori
Publisher
Korean Physical Society
Subject
General Physics and Astronomy