Radiation sensitive MOSFETs irradiated with various positive gate biases-Reference-Cited by-同舟云学术

Radiation sensitive MOSFETs irradiated with various positive gate biases

Published:2021-01-01 Issue:1 Volume:14 Page:353-357
ISSN:1687-8507
Container-title:Journal of Radiation Research and Applied Sciences
language:en
Short-container-title:Journal of Radiation Research and Applied Sciences

Author:

Ristic Goran S.¹^ORCID,Ilic Stefan D.¹^ORCID,Duane Russell²^ORCID,Andjelkovic Marko S.³,Palma Alberto J.⁴^ORCID,Lallena Antonio M.⁴^ORCID,Krstic Milos D.³,Stankovic Srboljub J.⁵,Jaksic Aleksandar B.²^ORCID

Affiliation:

1. Faculty of Electronic Engineering, University of Niš, Niš, Serbia

2. Tyndall National Institute, University College Cork, Cork, Ireland

3. IHP, Leibniz-Institut Für Innovative Mikroelektronik, Frankfurt Oder, Germany

4. Department of Electronics and Computer Technology, University of Granada, Granada, Spain

5. Department of Radiation and Environmental Protection, “Vinča” Institute of Nuclear Sciences, Belgrade, Serbia

Funder

European Union’s Horizon 2020 research and innovation programme

Ministry of Education, Science and Technology Development of the Republic of Serbia

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/16878507.2021.1970921

Reference29 articles.

1. The Effect of γ-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET

2. On the effect of bias on the behavior of MOS structures subjected to ionizing radiation

3. Using RADFET for the real-time measurement of gamma radiation dose rate

4. Use of High-Field Electron Injection into Dielectrics to Enhance Functional Capabilities of Radiation MOS Sensors

5. On the Combined Effect of Silicon Oxide Thickness and Boron Implantation Under the Gate in MOSFET Dosimeters

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