On the effect of bias on the behavior of MOS structures subjected to ionizing radiation-Reference-Cited by-同舟云学术

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On the effect of bias on the behavior of MOS structures subjected to ionizing radiation

Published:2015-06 Issue:6 Volume:49 Page:774-779
ISSN:1063-7826
Container-title:Semiconductors
language:en
Short-container-title:Semiconductors

Author:

Aleksandrov O. V.

Publisher

Pleiades Publishing Ltd

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1134/S1063782615060020.pdf

Reference25 articles.

1. V. S. Pershenkov, V. D. Popov, and A. V. Shal’nov, Surface Radiation Effects in Integrated Circuits (Energoatomizdat, Moscow, 1988) [in Russian].

2. F. P. Korshunov, Yu. V. Bogatyrev, and V. A. Vavilov, Effect of Radiation on Integrated Circuits (Nauka Tekhnika, Minsk, 1986) [in Russian].

3. A. P. Baraban, V. V. Bulavinov, and P. P. Konorov, Electronics of SiO 2 Layers on Silicon (Leningr. Gos. Univ., Leningrad, 1988) [in Russian].

4. V. A. Gurtov, Solid State Electronics (Tekhnosfera, Moscow, 2008), p. 67 [in Russian].

5. T. R. Oldham, IEEE Trans. Nucl. Sci. 50, 483 (2003).

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