Hydrogen-induced platelets in silicon studied by transmission electron microscopy-Reference-Cited by-同舟云学术

Hydrogen-induced platelets in silicon studied by transmission electron microscopy

Published:1995-10 Issue:4 Volume:72 Page:1057-1074
ISSN:0141-8610
Container-title:Philosophical Magazine A
language:en
Short-container-title:Philosophical Magazine A

Author:

Muto S.,Takeda S.,Hirata M.

Publisher

Informa UK Limited

Subject

Metals and Alloys,Physics and Astronomy (miscellaneous),Condensed Matter Physics,General Materials Science,Electronic, Optical and Magnetic Materials

Link

http://www.tandfonline.com/doi/pdf/10.1080/01418619508239953

Reference30 articles.

1. Microstructural defects induced by implantation of hydrogen in (111) silicon

2. Interaction of deuterium with defects in silicon studied by means of channeling

3. A Monte Carlo computer program for the transport of energetic ions in amorphous targets

4. Diatomic-Hydrogen-Complex Diffusion and Self-Trapping in Crystalline Silicon

5. Chu, W. K., Kastle, R. H., Lever, R. F., Mader, S. and Masters, B. J. Ion Implantation in Semiconductors, Proceedings of the Fifth International Conference on lon Implantation in Semiconductors and Other Materials. 1976, Boulder, Colorado. pp.483New York: Plenum.

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