Fully Bottom‐Up Waste‐Free Growth of Ultrathin Silicon Wafer via Self‐Releasing Seed Layer-Reference-Cited by-同舟云学术

Fully Bottom‐Up Waste‐Free Growth of Ultrathin Silicon Wafer via Self‐Releasing Seed Layer

Published:2021-09-02 Issue:41 Volume:33 Page:2103708
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Hong Ji‐Eun¹,Lee Yonghwan²³,Mo Sung‐In¹,Jeong Hye‐Seong¹⁴,An Jeong‐Ho¹,Song Hee‐eun⁵,Oh Jihun³,Bang Junhyeok⁴,Oh Joon‐Ho¹,Kim Ka‐Hyun⁴^ORCID

Affiliation:

1. Ulsan Advanced Energy Technology R&D Center Korea Institute of Energy Research Ulsan 44776 South Korea

2. Convergence Materials Research Center Innovative Technology Research Division Gumi Electronics and Information Technology Research Institute (GERI) Gumi 39171 South Korea

3. Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) Daejeon 34141 South Korea

4. Department of Physics Chungbuk National University Cheongju 28644 South Korea

5. Photovoltaics Laboratory Korea Institute of Energy Research Daejeon 34129 South Korea

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adma.202103708

Reference44 articles.

1. Transfer of an ultrathin single-crystal silicon film from a silicon-on-insulator to a polymer

2. Flexible substrate with floating island structure for mounting ultra-thin silicon chips

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5. Progress and prospects for ultrathin solar cells

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