Parallel Genetic Algorithm for Intelligent Model Parameter Extraction of Metal-Oxide-Semiconductor Field Effect Transistors-Reference-Cited by-同舟云学术

Parallel Genetic Algorithm for Intelligent Model Parameter Extraction of Metal-Oxide-Semiconductor Field Effect Transistors

Published:2009-02-17 Issue:3 Volume:24 Page:243-249
ISSN:1042-6914
Container-title:Materials and Manufacturing Processes
language:en
Short-container-title:Materials and Manufacturing Processes

Author:

Li Yiming

Publisher

Informa UK Limited

Subject

Industrial and Manufacturing Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://www.tandfonline.com/doi/pdf/10.1080/10426910802675814

Reference22 articles.

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2. Device Modeling for Analog and RF CMOS Circuit Design

3. Gildenblat , G. ; Li , X. ; Wang , H. ; Wu , W. ; van Langevelde , R. ; Scholten , A.J. ; Smit , G.D.J. ; Klaassen , D.B.M. Introduction to PSP MOSFET model . Proceedings of the 2005 Workshop on Compact Modeling ; Annaheim CA , USA , May 8–12 , 2005 ; 19 – 24 .

4. A drain-current model for DG PMOSFETs with fabricated 35 nm device comparison

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