Device and Compact Circuit-Level Modeling of Graphene Field-Effect Transistors for RF and Microwave Applications-Reference-Cited by-同舟云学术

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Device and Compact Circuit-Level Modeling of Graphene Field-Effect Transistors for RF and Microwave Applications

Published:2018-08 Issue:8 Volume:65 Page:2559-2570
ISSN:1549-8328
Container-title:IEEE Transactions on Circuits and Systems I: Regular Papers
language:
Short-container-title:IEEE Trans. Circuits Syst. I

Author:

Sang Lei^ORCID,Xu Yulong,Wu Yun,Chen Rongmin

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8919/8402068/08290577.pdf?arnumber=8290577

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance analysis of graphene field effect transistor at nanoscale regime;e-Prime - Advances in Electrical Engineering, Electronics and Energy;2024-09

2. A novel design of graphene field-effect transistor-based out-phasing power amplifier;Journal of Computational Electronics;2023-07-04

3. Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors;Advanced Materials;2022-11-07

4. Towards RF graphene devices: A review;FlatChem;2022-09

5. Graphene nanoribbon field effect transistors analysis and applications;Superlattices and Microstructures;2021-05

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