Full RLGC model extraction of Through Silicon Via (TSV) with charge distribution effects
Author:
Affiliation:
1. State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources, North China Electric Power University, Beijing, China
2. Department of Information Science and Electronics Engineering, Zhejiang University, Hangzhou, China
Publisher
Informa UK Limited
Subject
Electrical and Electronic Engineering,General Physics and Astronomy,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/09205071.2014.933086
Reference18 articles.
1. Handbook of 3D Integration
2. Electrical Modeling and Design for 3D System Integration
3. Suppression of Power/Ground Inductive Impedance and Simultaneous Switching Noise Using Silicon Through-Via in a 3-D Stacked Chip Package
4. Accurate Characterization of Broadband Multiconductor Transmission Lines for High-Speed Digital Systems
5. Modeling and Analysis of Through-Silicon Via (TSV) Noise Coupling and Suppression Using a Guard Ring
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1. Electrical–Thermal Cosimulation of Coaxial TSVs With Temperature-Dependent MOS Effect Using Equivalent Circuit Models;IEEE Transactions on Electromagnetic Compatibility;2020-10
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