The influence of implanted xenon on the sputtering yield of silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577508233004
Reference23 articles.
1. Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
2. The Z1dependence of heavy-ion sputtering yield in copper
3. Sputtering-yield studies on silicon and silver targets
4. The dose dependence of 45 keV V+and Bi+Ion sputtering yield of copper
5. Nonlinear effects in heavy‐ion sputtering
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1. Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation;Journal of Applied Physics;1997-02
2. Ion-induced alkali-silicon interfaces: Atomistic simulations of collisional effects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-12
3. Surface and depth analysis based on sputtering;Topics in Applied Physics;1991
4. Modification of stationary xenon implantation profiles in silicon by low-energy postbombardment with inert-gas ions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1985-03
5. HIGH-VACUUM DEPOSITION METHODS INVOLVING SUPERTHERMAL FREE PARTICLES;Thin Films from Free Atoms and Particles;1985
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