Modification of stationary xenon implantation profiles in silicon by low-energy postbombardment with inert-gas ions
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. The influence of sputtering, range shortening and stress-induced outdiffusion on the retention of xenon implanted in silicon
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5. On the Problem of Depth Distributions in Oxides Following High-Dose Labelings. (Sputtering and Depth-Distribution Phenomena, Part III)
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