Contribution of strain effects toward the damage measured in semiconductors by channeling
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577808240849
Reference13 articles.
1. Channeling measurements of damage in ion bombarded semiconductors at 50° K
2. Measurement of damage distributions in ion bombarded Si, GaP and GaAs at 50 K
3. Some new aspects for the evaluation of disorder profiles in silicon by backscattering
4. Radial distribution of ion-induced defects determined by channeling measurements
5. On the spatial distribution of channelled ions
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Investigation of Lattice Strain in Proton-Irradiated Semiconductor Materials;Physica Status Solidi (a);1989-03-16
2. Fractal geometry of collision cascades;Journal of Materials Research;1989-02
3. The production of excess interstitials by pre-amorphisation;Journal of Physics D: Applied Physics;1988-02-14
4. Swelling, Strain, and Radiation Damage of He+ Implanted GaP;physica status solidi (a);1986-08-16
5. A study of proton bombardment induced swelling of GaP single crystals;physica status solidi (a);1985-11-16
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