Some new aspects for the evaluation of disorder profiles in silicon by backscattering-Reference-Cited by-同舟云学术

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Some new aspects for the evaluation of disorder profiles in silicon by backscattering

Published:1973-01 Issue:3-4 Volume:17 Page:201-207
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Schmid K.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577308232616

Reference18 articles.

1. Defect studies in crystals by means of channeling

2. Gibson, W. M. Proceedings of the Conference on the Use of Small Accelerators for Teaching and Research. Oak-Ridge

3. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING

4. Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scattering

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