Measurement of lattice damage caused by ion-implantation doping of semiconductors†
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577108242045
Reference11 articles.
1. ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
2. Kikuchi-like reflection patterns obtained with the scanning electron microscope
3. MEASUREMENT OF ION IMPLANTATION LATTICE DAMAGE IN (111) GaAs USING THE SCANNING ELECTRON MICROSCOPE
4. PSEUDO‐KIKUCHI PATTERN DEGRADATION BY A THIN AMORPHOUS SILICON FILM
5. Lattice disorder produced in GaAs by 60 keV Cd ions and 70 keV Zn ions
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1. Ductile Mode Cutting of Calcium Fluoride;Springer Series in Advanced Manufacturing;2019-10-13
2. Ion doping of gallium arsenide;Soviet Physics Journal;1980-01
3. Flux and fluence dependence of implantation disorder in GaAs substrates;Journal of Applied Physics;1978-08
4. Electroreflectance measurements of lattice damage in ion implanted GaAs;Journal of Applied Physics;1976-07
5. Ion Implantation and Channeling;Treatise on Solid State Chemistry;1976
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