Flux and fluence dependence of implantation disorder in GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.325471
Reference9 articles.
1. Ionization, thermal, and flux dependences of implantation disorder in silicon
2. Flux and fluence dependence of disorder produced during implantation of11B in silicon
3. Electroreflectance measurements of melt‐doped and ion‐implanted GaAs
4. Electroreflectance measurements of lattice damage in ion implanted GaAs
5. Dose rate effects in indium implanted GaAs
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