Author:
Titov A. I.,Christodoulides C. E.,Carter G.,Nobes M. J.
Cited by
21 articles.
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1. In-situ analysis of ion-induced physicochemical change of Si surface by secondary electron yield detection;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-02
2. Damage buildup in GaN under ion bombardment;Physical Review B;2000-09-15
3. Ion beam induced amorphous–crystalline phase transition in Si: Quantitative approach;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-07
4. Damage accumulation in Si during N+ and bombardment along random and channeling directions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01
5. Molecular effect in the implantation of light ions in semiconductors;Semiconductors;1997-10