In-situ analysis of ion-induced physicochemical change of Si surface by secondary electron yield detection-Reference-Cited by-同舟云学术

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In-situ analysis of ion-induced physicochemical change of Si surface by secondary electron yield detection

Published:2019-02 Issue: Volume:441 Page:56-62
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Ghosh Subhash,Karmakar Prasanta^ORCID

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference22 articles.

1. Kinetic electron emission from solid surfaces under Ion bombardment;Hasselkamp,1992

2. Particle Induced Electron Emission I;Rosler,1991

3. Practical scanning electron microscopy: electron and ion microprobe analysis;Goldstein,1975

4. Detectors in nuclear science;Bromley;Nucl. Instrum. Meth.,1979

5. Principles of Plasma Discharges and Materials Processing;Lieberman,2005

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Carbon ion beam induced chemical modification and nano-pyramid growth on Si surface;Physica Scripta;2022-12-29

2. Effect of MeV ion induced heating on secondary electron emission from Si surface and estimation of local temperature;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-04

3. Investigating the Secondary Electron Emission of Nanomaterials Induced by a High‐Resolution Proton Beam;physica status solidi (b);2022-02-13

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